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| Data Sheet 100mA REGULATED CHARGE PUMP General Description The AP3602A/B are regulated step-up DC/DC converters based on charge pump technique. These ICs have the ability to supply 100mA constant output current or 250mA peak output current for 100ms from 3.0V to 5V input (2.7V to 4.5 V for AP3602B), so they can be used as white LEDs driver or flash LED driver. The AP3602A/B have very low power dissipation and high efficiency in typical applications. Other features include over-temperature protection, low temperature coefficient and etc. to meet some special requirements of hand-held battery powered devices. Only 3 external capacitors are required in applications, which helps to save space and lower cost. These chips also have a disable terminal to turn on or turn off the chip to ease the use. The AP3602A/B are available in SOT-23-6 package. AP3602A/B Features * * * Low Quiescent Current: 13A Typical Regulated Output Voltage Precision: 4% High Output Current: 100mA when VIN3.0V 50mA when VIN2.7V High Frequency: up to 1.2 MHz Low Shutdown Supply Current: <1A High Output Peak Current: 250mA for 100ms Over Temperature Protection Operating Temperature Range: -40oC to 85oC * * * * * Applications * * * * * Mobile Phone Backlight Driver Camera Flash LED Driver MP3, MP4 Handheld Device Portable Communication Device SOT-23-6 Figure 1. Package Type of AP3602A/B Apr. 2007 Rev. 1.2 1 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Pin Configuration K Package (SOT-23-6) AP3602A/B VOUT GND SHDN 1 2 3 6 5 4 C+ VIN C- Figure 2. Pin Configuration of AP3602A/B (Top View) Pin Description Pin Number 1 Pin Name VOUT Function Regulated Output Voltage. VOUT should be bypassed with a 1F to 22F low ESR ceramic capacitor which is placed as close to the pin as possible for best performance Ground. GND should be tied to a ground plane for best performance. The COUT and CIN should be placed as close to this pin as possible Active Low Shutdown Input. A low signal on SHDN disables the AP3602A/B, while a high signal enables the AP3602A/B. SHDN pin must not be allowed to float Flying Capacitor Negative Terminal. The flying capacitor should be placed as close to this pin as possible Input Supply Voltage. VIN should be bypassed with a 1F to 22F low ESR ceramic capacitor which is placed as close to the pin as possible for best performance Flying Capacitor Positive Terminal. The flying capacitor should be placed as close to this pin as possible 2 GND 3 SHDN 4 C- 5 VIN 6 C+ Apr. 2007 Rev. 1.2 2 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Functional Block Diagram VIN 5 OTP S3 S1 AP3602A/B SHDN 3 CONTROL 6 C+ C- 4 S4 S2 OSC EN 1.25V 1 R1 +- VOUT COMP R2 2 GND Figure 3. Functional Block Diagram of AP3602A/B Ordering Information AP3602 Circuit Type Output Voltage A: 5V B: 4.5V E1: Lead Free TR: Tape and Reel Package K: SOT-23-6 Package SOT-23-6 Temperature Range -40 to 85oC Part Number AP3602AKTR-E1 AP3602BKTR-E1 Marking ID E7T E8T Packing Type Tape & Reel Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Apr. 2007 Rev. 1.2 3 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Absolute Maximum Ratings (Note 1) Parameter Input Voltage Output Voltage SHDN Pin Voltage Thermal Resistance (Junction to Ambient, no Heat sink) Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) ESD (Human Body Model) Symbol VIN VO VSHDN RJA TJ TSTG TLEAD Value 7 7 7 300 150 -65 to 150 260 2000 Unit V V V oC/W oC oC oC AP3602A/B V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage Operating Temperature VIN TA AP3602A AP3602B 2.7 2.7 -40 5 V 4.5 85 oC Apr. 2007 Rev. 1.2 4 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Electrical Characteristics (CFLY=1F, CIN=COUT=10F, TA=25oC, unless otherwise specified.) AP3602A/B For AP3602A Parameter Input Voltage Quiescent Current Symbol VIN IQ VO=5V VIN=2.7V to 5.0V, IO=0mA, VSHDN =VIN, Not Switching 2.7V VO V Shutdown Supply Current ISHDN fOSC VIH VIN=2.7V, IO=50mA Oscillator free running A Apr. 2007 Rev. 1. 2 5 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Electrical Characteristics (Continued) (CFLY=1F, CIN=COUT=10F, TA=25oC, unless otherwise specified.) AP3602A/B For AP3602B Parameter Input Voltage Quiescent Current Symbol VIN IQ VO=4.5V VIN=2.7V to 4.5V, IO=0mA, VSHDN =VIN, Not Switching 2.7V VO V fOSC VIH VIN=2.7V, IO=50mA Oscillator free running A Apr. 2007 Rev. 1.2 6 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Application Information Operating Principles The AP3602A/B use a switched capacitor charge pump to boost the input voltage to a regulated output voltage. Regulation is achieved by sensing the chip output voltage through an internal resistor divider network. Controlled by an internal comparator (refer to the functional block diagram), the charge pump circuit is enabled when the divided output voltage is below a preset trip point . The charge pump operates at 1.2MHz with 50% duty cycle. Conversion consists of a two-phase operation. In the first phase, switches S2 and S3 are opened and S1 and S4 are closed. During this time, CFLY charges to the voltage on VIN and load current is supplied by COUT. During the second phase, S2 and S3 are closed, and S1 and S4 are opened. This action connects CFLY low side to VIN, CFLY high side to VOUT, then a voltage about 2*VIN is used to charge COUT and supply the load current. For each cycle, charges is transported from VIN to VOUT to maintain the output voltage in its nominal value. This process breaks when the VOUT is high enough for the reason of higher input voltage or lower load, then the divided voltage at the control comparator exceeds the internal trip point high level, which compels the charge pump circuit enter to the idle mode in which the switching cycle stops (pulse skipping) and the output voltage is continually decreased because it is maintained by the discharging of COUT only. In idle mode, the feedback circuit continues sensing VOUT. If the AP3602A/B divided voltage at the control comparator drops below the preset trip point, the comparator will start the switching cycle again. In idle mode, the AP3602A/B's quiescent current is about 13A. In shutdown mode, all internal circuitry is turned off and the AP3602A/B draw only leakage current from VIN, which is less than 1A. So, the shutdown power loss for AP3602A/B is very low, that is beneficial to the battery supplied systems. Short Circuit and Thermal Protection The AP3602A/B have a thermal protection and shutdown circuit that continuously monitors the IC junction temperature. When output short circuit occurs, the short circuit current is about 300mA (Typical). Under this condition, the IIN is about 2*Iout, which causes about 1.8W instant power dissipation on AP3602A/B, that will cause a rise in the internal IC junction temperature. If the thermal protection circuit senses the junction temperature exceeding approximately 160oC, the thermal shutdown circuit will disable the charge pump switching circuit. The thermal hysteresis is about 10oC, which means that the charge pump circuit can be active when the short circuit is removed and the junction temperature drops below 150oC. The thermal shutdown protection will cycle on and off if an output short circuit condition persists. This will allow the AP3602A/B to operate on a short circuit condition without latch up or damage to the device. Apr. 2007 Rev. 1.2 7 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Typical Performance Characteristics Typical Performance Characteristics for AP3602A (Unless otherwise noted, VIN=3.0V, CIN=COUT=10F, CFLY=1F Ceramic Cap, TA=25oC) AP3602A/B 5.2 100 5.0 90 AP3602-5.0V, IOUT=25mA AP3602-5.0V, IOUT=50mA AP3602-5.0V, IOUT=100mA Output Voltage (V) 4.8 4.6 Efficiency (%) AP3602-5.0V, VIN=3.0V AP3602-5.0V, VIN=2.7V 0 25 50 75 100 125 150 80 70 4.4 60 4.2 50 4.0 40 2.5 3.0 3.5 4.0 4.5 5.0 Output Current (mA) Input Voltage (V) Figure 4. Output Voltage vs. Output Current Figure 5. Efficiency vs. Input Voltage 92.5 90.0 87.5 VSHDN 2V/div 95.0 VSHDN 0V to 3V Efficiency (%) 85.0 82.5 77.5 75.0 72.5 70.0 0.1 AP3602-5.0V, VIN=2.7V AP3602-5.0V, VIN=3.0V 1 10 100 Output Current (mA) VOUT 1V/div 80.0 Time 40S/div Figure 6. Efficiency vs. Output Current Figure 7. VOUT Start UpTime, @ No Load Apr. 2007 Rev. 1.2 8 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Typical Performance Characteristics (Continued) Typical Performance Characteristics for AP3602A (Continued) (Unless otherwise noted, VIN=3.0V, CIN=COUT=10F, CFLY=1F Ceramic Cap, TA=25oC) AP3602A/B VSHDN 2V/div VSHDN 0V to 3V VSHDN 2V/div VSHDN 0V to 3V VOUT 1V/div Time 40S/div VOUT 1V/div Time 40S/div Figure 8. VOUT Start Up Time, @ 50mA Load Figure 9. VOUT Start Up Time, @ 100mA Load IOUT 0mA to 50mA IOUT 0mA to 100mA IOUT 50mA/div VOUT 50mV/div Time 200S/div VOUT 50mV/div IOUT 50mA/div Time 200S/div Figure 10. Load Transient Response Figure 11. Load Transient Response Apr. 2007 Rev. 1.2 9 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Typical Performance Characteristics (Continued) Typical Performance Characteristics for AP3602A (Continued) (Unless otherwise noted, VIN=3.0V, CIN=COUT=10F, CFLY=1F Ceramic Cap, TA=25oC) AP3602A/B Output Ripple 10mV/div Time 2mS/div Output Ripple 10mV/div Time 400nS/div Figure 12. Output Ripple @ VIN=2.7V, IOUT=0mA Figure 13. Output Ripple @ VIN=2.7V, IOUT=50mA Output Ripple 10mV/div Time 400nS/div Figure 14. Output Ripple @ VIN=2.7V, IOUT=100mA Apr. 2007 Rev. 1.2 10 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Typical Performance Characteristics (Continued) Typical Performance Characteristics for AP3602B (Unless otherwise noted, VIN=3.0V, CIN=COUT=10F, CFLY=1F Ceramic Cap, TA=25oC) AP3602A/B 4.6 90 4.4 80 AP3602-4.5V, IOUT=25mA AP3602-4.5V, IOUT=50mA AP3602-4.5V, IOUT=100mA Output Voltage (V) Efficiency (%) 4.2 70 4.0 60 3.8 AP3602-4.5V, VIN=3.0V AP3602-4.5V, VIN=2.7V 50 3.6 0 25 50 75 100 125 150 40 2.5 3.0 3.5 4.0 4.5 Output Current (mA) Input Voltage (V) Figure 15. Output Voltage vs. Output Current Figure 16. Efficiency vs. Input Voltage 85.0 82.5 IOUT 0mA to 50mA 77.5 Efficiency (%) 75.0 72.5 70.0 67.5 65.0 62.5 60.0 0.1 AP3602-4.5V, VIN=2.7V AP3602-4.5V, VIN=3.0V 1 10 100 Output Current (mA) VOUT 50mV/div IOUT 50mA/div 80.0 Time 200S/div Figure 17. Efficiency vs. Output Current Figure 18. Load Transient Response Apr. 2007 Rev. 1.2 11 BCD Semiconductor Manufacturing Limited IOUT 0mA to 50mA Data Sheet 100mA REGULATED CHARGE PUMP Typical Performance Characteristics (Continued) Typical Performance Characteristics for AP3602B (Continued) (Unless otherwise noted, VIN=3.0V, CIN=COUT=10F, CFLY=1F Ceramic Cap, TA=25oC) IOUT 0mA to 100mA AP3602A/B IOUT 50mA/div VOUT 50mV/div Time 200S/div Output Ripple 10mV/div Time 40mS/div Figure 19. Load Transient Response Figure 20. Output Ripple @ VIN=2.7V, IOUT=0mA Output Ripple 10mV/div Time 1S/div Output Ripple 10mV/div Time 400nS/div Figure 21. Output Ripple @ VIN=2.7V, IOUT=50mA Figure 22. Output Ripple @ VIN=2.7V, IOUT=100mA Apr. 2007 Rev. 1.2 12 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Typical Performance Characteristics (Continued) Typical Performance Characteristics for AP3602A/B (Unless otherwise noted, VIN=3.0V, CIN=COUT=10F, CFLY=1F Ceramic Cap, TA=25oC) AP3602A/B 20 20 18 16 Supply Current (A) 16 Supply Current (A) 12 14 8 12 4 No Load, Not Switching 10 2.5 3.0 3.5 4.0 4.5 5.0 0 0 1 2 3 VIN=2.7V VIN=3.0V 4 5 Supply Voltage (V) SHDN Voltage (V) Figure 23. Supply Current vs. Supply Voltage Figure 24. Supply Current vs. SHDN Voltage 1800 1700 1.00 0.75 Normalized Output Voltage (%) 1600 0.50 0.25 0.00 -0.25 -0.50 -0.75 -1.00 -50 Frequency (kHz) 1500 1400 1300 1200 TA=-50 C o 1100 1000 2.5 TA=25 C TA=100 C o o VIN=3.0V, IOUT=25mA -25 0 25 50 o 3.0 3.5 4.0 4.5 5.0 75 100 Supply Voltage (V) Temperature ( C) Figure 25. Oscillator Frequency vs. Supply Voltage Figure 26. Normalized Output Voltage vs. Temperature Apr. 2007 Rev. 1.2 13 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Typical Performance Characteristics (Continued) Typical Performance Characteristics for AP3602A/B (Continued) (Unless otherwise noted, VIN=3.0V, CIN=COUT=10F, CFLY=1F Ceramic Cap, TA=25oC) AP3602A/B 1.0 1.0 SHDN Input Threshold High Voltage (V) SHDN Input Threshold Low Voltage (V) 0.9 0.9 0.8 0.8 0.7 0.7 0.6 TA=-40 C TA=25 C TA=85 C o o o 0.6 TA=-40 C TA=25 C TA=85 C o o o 0.5 2.5 3.0 3.5 4.0 4.5 5.0 0.5 2.5 3.0 3.5 4.0 4.5 5.0 Input Voltage (V) Input Voltage (V) Figure 27. VIH vs. VIN Figure 28. VIL vs. VIN Apr. 2007 Rev. 1.2 14 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Typical Application AP3602A/B 1F VIN=2.7V to 4.2V VIN SHDN 10F C+ C- 4 * 120 VOUT AP3602A GND 10F LED's VF=3.2V Figure 29. AP3602A/B-5.0V Typical Application Circuit 1F VIN=2.7V to 4.2V VIN SHDN 10F C+ C- 4 * 91 VOUT AP3602B GND 10F LED's VF=3.2V Figure 30. AP3602A/B-4.5V Typical Application Circuit Apr. 2007 Rev. 1. 2 15 BCD Semiconductor Manufacturing Limited Data Sheet 100mA REGULATED CHARGE PUMP Mechanical Dimensions SOT-23-6 Unit: mm(inch) AP3602A/B 2.820(0.111) 3.020(0.119) 0.300(0.012) 0.400(0.016) 0.300(0.012) 0.600(0.024) 0 8 0.200(0.008) 6 2.650(0.104) 2.950(0.116) 5 4 Pin 1 Dot by Marking 1 2 3 0.700(0.028)REF 0.950(0.037)TYP 1.800(0.071) 2.000(0.079) 0.000(0.000) 0.100(0.004) 0.100(0.004) 0.200(0.008) 1.050(0.041) 1.050(0.041) 1.150(0.045) 1.250(0.049) Apr. 2007 Rev. 1.2 16 1.500(0.059) 1.700(0.067) BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788 |
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